advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 30v simple drive requirement r ds(on) 6m fast switching characteristic i d 68a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 200806042 1 thermal data parameter storage temperature range operating junction temperature range -55 to 150 -55 to 150 total power dissipation gate-source voltage 20 continuous drain current 68 continuous drain current 43 pulsed drain current 1 250 parameter rating drain-source voltage 30 AP9412AGH 44.6 rohs-compliant product g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 6 m ? ?
AP9412AGH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6.0v 5.0 v v g =4.0v 0 50 100 150 200 250 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 6.0v 5.0 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m
AP9412AGH fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =18v v ds =24v 100 1000 10000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9412agh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement 5
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